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  smcj5.0 thru 188ca vishay semiconductors formerly general semiconductor document number 88394 www.vishay.com 1-may-02 1 surface mount t rans z orb transient voltage suppressors stand-off voltage 5.0 to 188v peak pulse power 1500w 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.103 (2.62) 0.079 (2.06) cathode band dimensions in inches and (millimeters) features underwriters laboratory recognition under ul standard for safety 497b: isolated loop circuit protection low profile package with built-in strain relief for surface mounted applications glass passivated junction low incremental surge resistance, excellent clamping capability 1500w peak pulse power capability with a 10/1000 s waveform, repetition rate (duty cycle): 0.01% very fast response time high temperature soldering guaranteed: 250 c/10 seconds at terminals contact local sales office for gull-wing lead (smcg prefix) form (do-215ab) mechanical data case: jedec do-214ab molded plastic over passivated junction terminals: solder plated, solderable per mil-std-750, method 2026 polarity: for unidirectional types the band denotes the cathode, which is positive with respect to the anode under normal tvs operation weight: 0.007oz., 0.21g flammability: epoxy is rated ul 94v-0 packaging codes ?options (antistatic): 51 1k per bulk box, 10k/carton 57 850 per 7 plastic reel (16mm tape), 8.5k/carton 9a 3.5k per 13 plastic reel (16mm tape), 35k/carton 0.185 max. (4.69 max.) 0.121 min. (3.07 min.) 0.060 min. (1.52 min.) 0.320 ref mounting pad layout extended voltage range devices for bidirectional applications for bi-directional devices, use suffix c or ca (e.g. smcj10c, smcj10ca). electrical characteristics apply in both directions. maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit peak pulse power dissipation with p ppm minimum 1500 w a 10/1000 s waveform (1)(2) peak pulse current with a 10/1000 s waveform (1) i ppm see next table a peak forward surge current 8.3ms single half sine-wave (2) i fsm 200 a uni-directional only typical thermal resistance, junction to ambient (3) r ja 75 c/w typical thermal resistance, junction to lead r jl 15 c/w operating junction and storage temperature range t j , t stg 55 to +150 c notes: (1) non-repetitive current pulse, per fig.3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.31 x 0.31 (8.0 x 8.0mm) copper pads to each terminal (3) mounted on minimum recommended pad layout do-214ab (smc j-bend)
smcj5.0 thru 188ca vishay semiconductors formerly general semiconductor www.vishay.com document number 88394 2 1-may-02 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. v f = 3.5v at i f = 100a (uni-directional only) device breakdown voltage maximum maximum maximum device type marking v (br) at i t (1) test stand-off reverse leakage peak pulse surge clamping modified code (v) current voltage at v wm current i ppm voltage at i ppm ??bend lead uni bi min max i t (ma) v wm (v) i d ( a) (3) (a) (2) v c (v) +smcj5.0 gdd gdd 6.40 7.82 10.0 5.0 1000 156.3 9.6 +smcj5.0a (5) gde gde 6.40 7.07 10.0 5.0 1000 163.0 9.2 +smcj6.0 gdf gdf 6.67 8.15 10.0 6.0 1000 131.6 11.4 +smcj6.0a gdg gdg 6.67 7.37 10.0 6.0 1000 145.6 10.3 +smcj6.5 gdh bdh 7.22 8.82 10.0 6.5 500 122.0 12.3 +smcj6.5a gdk bdk 7.22 7.98 10.0 6.5 500 133.9 11.2 +smcj7.0 gdl gdl 7.78 9.51 10.0 7.0 200 112.8 13.3 +smcj7.0a gdm gdm 7.78 8.60 10.0 7.0 200 125.0 12.0 +smcj7.5 gdn bdn 8.33 10.2 1.0 7.5 100 104.9 14.3 +smcj7.5a gdp bdp 8.33 9.21 1.0 7.5 100 116.3 12.9 +smcj8.0 gdq bdg 8.89 10.9 1.0 8.0 50 100.0 15.0 +smcj8.0a gdr bdr 8.89 9.83 1.0 8.0 50 110.3 13.6 +smcj8.5 gds bds 9.44 11.5 1.0 8.5 20 94.3 15.9 +smcj8.5a gdt bdt 9.44 10.4 1.0 8.5 20 104.2 14.4 +smcj9.0 gdu bdu 10.0 12.2 1.0 9.0 10 88.8 16.9 +smcj9.0a gdv bdv 10.0 11.1 1.0 9.0 10 97.4 15.4 +smcj10 gdw bdw 11.1 13.6 1.0 10 5.0 79.8 18.8 +smcj10a gdx bdx 11.1 12.3 1.0 10 5.0 88.2 17.0 +smcj11 gdy gdy 12.2 14.9 1.0 11 5.0 74.6 20.1 +smcj11a gdz gdz 12.2 13.5 1.0 11 5.0 82.4 18.2 +smcj12 ged bed 13.3 16.3 1.0 12 5.0 68.2 22.0 +smcj12a gee bee 13.3 14.7 1.0 12 5.0 75.4 19.9 +smcj13 gef gef 14.4 17.6 1.0 13 1.0 63.0 23.8 +smcj13a geg geg 14.4 15.9 1.0 13 1.0 69.8 21.5 +smcj14 geh beh 15.6 19.1 1.0 14 1.0 58.1 25.8 +smcj14a gek bek 15.6 17.2 1.0 14 1.0 64.7 23.2 +smcj15 gel bel 16.7 20.4 1.0 15 1.0 55.8 26.9 +smcj15a gem bem 16.7 18.5 1.0 15 1.0 61.5 24.4 +smcj16 gen gen 17.8 21.8 1.0 16 1.0 52.1 28.8 +smcj16a gep gep 17.8 19.7 1.0 16 1.0 57.7 26.0 +smcj17 geq geq 18.9 23.1 1.0 17 1.0 49.2 30.5 +smcj17a ger ger 18.9 20.9 1.0 17 1.0 54.3 27.6 +smcj18 ges bes 20.0 24.4 1.0 18 1.0 46.6 32.2 +smcj18a get bet 20.0 22.1 1.0 18 1.0 51.4 29.2 +smcj20 geu beu 22.2 27.1 1.0 20 1.0 41.9 35.8 +smcj20a gev bev 22.2 24.5 1.0 20 1.0 46.3 32.4 +smcj22 gew bew 24.4 29.8 1.0 22 1.0 38.1 39.4 +smcj22a gex bex 24.4 26.9 1.0 22 1.0 42.3 35.5 +smcj24 gey bey 26.7 32.6 1.0 24 1.0 34.9 43.0 +smcj24a gez bez 26.7 29.5 1.0 24 1.0 38.6 38.9 +smcj26 gfd bfd 28.9 35.3 1.0 26 1.0 32.2 46.6 +smcj26a gfe bfe 28.9 31.9 1.0 26 1.0 35.6 42.1 +smcj28 gff bff 31.1 38.0 1.0 28 1.0 30.0 50.0 +smcj28a gfg bfg 31.1 34.4 1.0 28 1.0 33.0 45.4 +smcj30 gfh bfh 33.3 40.7 1.0 30 1.0 28.0 53.5 +smcj30a gfk bfk 33.3 36.8 1.0 30 1.0 31.0 48.4 notes: (1) pulse test: t p 50ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) for bi-directional types having v wm of 10 volts and less, the i d limit is doubled (4) all terms and symbols are consistent with ansi/ieee c62.35 (5) for the bi-directional smcg/smcj5.0ca, the maximum v (br) is 7.25v + underwriters laboratory recognition for the classification of protectors (qvgq2) under the ul standard for safety 497b and fi le number e136766 for both uni-directional and bi-directional devices
smcj5.0 thru 188ca vishay semiconductors formerly general semiconductor document number 88394 www.vishay.com 1-may-02 3 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. v f = 3.5v at i f = 100a (uni-directional only) device breakdown voltage maximum maximum maximum device type marking v (br) at i t (1) test stand-off reverse leakage peak pulse surge clamping modified code (v) current voltage at v wm current i ppm voltage at i ppm ??bend lead uni bi min max i t (ma) v wm (v) i d ( a) (3) (a) (2) v c (v) +smcj33 gfl bfl 36.7 44.9 1.0 33 1.0 25.4 59.0 +smcj33a gfm bfm 36.7 40.6 1.0 33 1.0 28.1 53.3 +smcj36 gfn bfn 40.0 48.9 1.0 36 1.0 23.3 64.3 +smcj36a gfp bfp 40.0 44.2 1.0 36 1.0 25.8 58.1 +smcj40 gfq bfq 44.4 54.3 1.0 40 1.0 21.0 71.4 +smcj40a gfr bfr 44.4 49.1 1.0 40 1.0 23.3 64.5 +smcj43 gfs bfs 47.8 58.4 1.0 43 1.0 19.6 76.7 +smcj43a gft bft 47.8 52.8 1.0 43 1.0 21.6 69.4 +smcj45 gfu gfu 50.0 61.1 1.0 45 1.0 18.7 80.3 +smcj45a gfv gfv 50.0 55.3 1.0 45 1.0 20.6 72.7 +smcj48 gfw gfw 53.3 65.1 1.0 48 1.0 17.5 85.5 +smcj48a gfx gfx 53.3 58.9 1.0 48 1.0 19.4 77.4 +smcj51 gfy gfy 56.7 69.3 1.0 51 1.0 16.5 91.1 +smcj51a gfz gfz 56.7 62.7 1.0 51 1.0 18.2 82.4 +smcj54 ggd ggd 60.0 73.3 1.0 54 1.0 15.6 96.3 +smcj54a gge gge 60.0 66.3 1.0 54 1.0 17.2 87.1 +smcj58 ggf ggf 64.4 78.7 1.0 58 1.0 14.6 103 +smcj58a ggg ggg 64.4 71.2 1.0 58 1.0 16.0 93 +smcj60 ggh ggh 66.7 81.5 1.0 60 1.0 14.0 107 +smcj60a ggk ggk 66.7 73.7 1.0 60 1.0 15.5 96 +smcj64 ggl ggl 71.1 86.9 1.0 64 1.0 13.2 114 +smcj64a ggm ggm 71.1 78.6 1.0 64 1.0 14.6 103 +smcj70 ggn ggn 77.8 95.1 1.0 70 1.0 12.0 125 +smcj70a ggp ggp 77.8 86.0 1.0 70 1.0 13.3 113 +smcj75 ggq ggq 83.3 102 1.0 75 1.0 11.2 134 +smcj75a ggr ggr 83.3 92.1 1.0 75 1.0 12.4 121 +smcj78 ggs ggs 86.7 106 1.0 78 1.0 10.8 139 +smcj78a ggt ggt 86.7 95.8 1.0 78 1.0 11.9 126 +smcj85 ggu ggu 94.4 115 1.0 85 1.0 9.9 151 +smcj85a ggv ggv 94.4 104 1.0 85 1.0 10.9 137 +smcj90 ggw ggw 100 122 1.0 90 1.0 9.4 160 +smcj90a ggx ggx 100 111 1.0 90 1.0 10.3 146 +smcj100 ggy ggy 111 136 1.0 100 1.0 8.4 179 +smcj100a ggz ggz 111 123 1.0 100 1.0 9.3 162 +smcj110 ghd ghd 122 149 1.0 110 1.0 7.7 196 +smcj110a ghe ghe 122 135 1.0 110 1.0 8.5 177 +smcj120 ghf ghf 133 163 1.0 120 1.0 7.0 214 +smcj120a ghg ghg 133 147 1.0 120 1.0 7.8 193 +smcj130 ghh ghh 144 176 1.0 130 1.0 6.5 231 +smcj130a ghk ghk 144 159 1.0 130 1.0 7.2 209 +smcj150 ghl ghl 167 204 1.0 150 1.0 5.6 268 +smcj150a ghm ghm 167 185 1.0 150 1.0 6.2 243 +smcj160 ghn ghn 178 218 1.0 160 1.0 5.2 287 +smcj160a ghp ghp 178 197 1.0 160 1.0 5.8 259 +smcj170 ghq ghq 189 231 1.0 170 1.0 4.9 304 +smcj170a ghr ghr 189 209 1.0 170 1.0 5.5 275 smcj188 ght ght 209 255 1.0 188 1.0 4.4 344 smcj188a ghs ghs 209 231 1.0 188 1.0 4.6 328 notes: (1) pulse test: t p 50ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) for bi-directional types having v wm of 10 volts and less, the i d limit is doubled (4) all terms and symbols are consistent with ansi/ieee c62.35 + underwriters laboratory recognition for the classification of protectors (qvgq2) under the ul standard for safety 497b and fi le number e136766 for both uni-directional and bi-directional devices
smcj5.0 thru 188ca vishay semiconductors formerly general semiconductor www.vishay.com document number 88394 4 1-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) c j junction capacitance (pf) fig. 4 typical junction capacitance uni-directional 0 25 50 75 100 0 75 25 50 100 125 150 175 200 peak pulse power (p pp ) or current (i pp ) derating in percentage, % t a ambient temperature ( c) 10 100 1,000 10,000 20,000 10 1 100 400 v wm reverse stand-off voltage (v) fig. 2 pulse derating curve p ppm peak pulse power (kw) fig. 1 peak pulse power rating curve 0.1 1 10 100 0.1 s 1.0 s10 s t d pulse width (sec.) 100 s 1.0ms 10ms 0.31 x 0.31" (8.0 x 8.0mm) copper pad areas t j = 25 c f = 1.0mhz vsig = 50mvp-p measured at zero bias v r , measured at stand-off voltage, v wm fig. 6 - maximum non-repetitive forward surge current uni-directional use only 1 10 100 10 100 200 peak forward surge current, amperes number of cycles at 60hz 8.3ms single half sine-wave (jedec method) t j = t j max. uni-directional bi-directional t p pulse duration (sec) transient thermal impedance ( c/w) fig. 5 typical transient thermal impedance 0.1 1.0 10 100 0.001 0.01 0.1 1 10 100 1000 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms)


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